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LND150N3-G :: DMOS FET, N-Channel, TO-92

Artikel-Nr.: LND150N3-G
0,55 €
Warengruppe: 1

LND150N3-G

The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

• Free from secondary breakdown
• Low power drive requirement
• Ease of paralleling
• Excellent thermal stability
• Integral source-drain diode
• High input impedance and low CISS
• ESD gate protection

Technical Data:
• BVdsx: 500 V
• RDS: 1000 Ohm
• Ugs (off): -1,0 ... -3,0 V
• RDS: 1 kOhm
• Ic: 1 mA



Hersteller : MICROCHIP
Artikelnummer des Herstellers : LND150N3-G
Verpackungsgewicht : 0.0001 kg
RoHS : konform
Technische Daten
Datenblatt/Bedienungsanleitung