reichelt elektronik GmbH & Co. KG
Elektronikring 1
26452 Sande Germany

Telefon: +49 (0)4422 955-333
mail: info@reichelt.de
www.reichelt.de


LND150K1-G :: DMOS FET, N-Channel, SOT-23

Artikel-Nr.: LND150K1-G
0,44 €
Warengruppe: 1

LND150K1-G

The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

• Free from secondary breakdown
• Low power drive requirement
• Ease of paralleling
• Excellent thermal stability
• Integral source-drain diode
• High input impedance and low CISS
• ESD gate protection

Technical Data:
• BVdsx: 500 V
• RDS: 1000 Ohm
• Ugs (off): -1,0 ... -3,0 V
• RDS: 1 kOhm
• Ic: 1 mA



Hersteller : MICROCHIP
Artikelnummer des Herstellers : LND150K1-G
Verpackungsgewicht : 0.0001 kg
RoHS : konform
Technische Daten
Datenblatt/Bedienungsanleitung