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reichelt elektronik GmbH & Co. KG
Elektronikring 1
26452 Sande Germany

Telefon: +49 (0)4422 955-333
mail: info@reichelt.de

DN2450N8-G :: MOSFET, N-Channel, 500 V, 10 Ohm, SOT-89


These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

• High input impedance
• Low input capacitance
• Fast switching speeds
• Low on-resistance
• Free from secondary breakdown
• Low input and output leakage

Technical Data:
• BVdsx: 500 V
• Ugs (off): -1,5 ... 3,5 V
• RDS: 10 Ohm
• Ic: 700 mA

Hersteller : MICROCHIP
Artikelnummer des Herstellers : DN2450N8-G
Verpackungsgewicht : 0.0001 kg
RoHS : konform
Technische Daten